Two-dimensional excitonic emission in InAs submonolayers
Identifieur interne : 002540 ( Chine/Analysis ); précédent : 002539; suivant : 002541Two-dimensional excitonic emission in InAs submonolayers
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Abstract
Photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to study optical emissions of ultrathin InAs layers with average layer thickness ranging from 1/12 to 1 ML grown on GaAs substrates. We have found that the inhomogeneous broadening of the PL from InAs layers can be well described by the quantum-well model with InAs islands coupling to each other and being regarded as a quasiwell. From the temperature dependence of the exciton linewidth, the exciton-LO-phonon scattering coefficient was found to be comparable to that in conventional two-dimensional quantum wells. In the TRPL measurements, the PL decay time increases linearly with temperature, which is a typical characteristic of free excitons in quantum wells. All these results indicate that the excitons localized in InAs exhibit two-dimensional properties of quantum wells, despite the topographical islandlike structure. © 1996 The American Physical Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Two-dimensional excitonic emission in InAs submonolayers</title><author><name sortKey="Yuan, Z L" uniqKey="Yuan Z">Z. L. Yuan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Laboratory for Superlattices & Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>National Laboratory for Superlattices & Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083</wicri:regionArea><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Xu, Z Y" uniqKey="Xu Z">Z. Y. Xu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Laboratory for Superlattices & Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>National Laboratory for Superlattices & Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083</wicri:regionArea><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Zheng, B Z" uniqKey="Zheng B">B. Z. Zheng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Laboratory for Superlattices & Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>National Laboratory for Superlattices & Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083</wicri:regionArea><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Xu, J Z" uniqKey="Xu J">J. Z. Xu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Laboratory for Superlattices & Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>National Laboratory for Superlattices & Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083</wicri:regionArea><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Li, S S" uniqKey="Li S">S. S. Li</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Laboratory for Superlattices & Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>National Laboratory for Superlattices & Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083</wicri:regionArea><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Ge, W" uniqKey="Ge W">W. Ge</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Hong Kong</country><wicri:regionArea>Department of Physics, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon</wicri:regionArea><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author><author><name sortKey="Wang, Y" uniqKey="Wang Y">Y. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Hong Kong</country><wicri:regionArea>Department of Physics, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon</wicri:regionArea><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author><author><name sortKey="Wang, J" uniqKey="Wang J">J. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Hong Kong</country><wicri:regionArea>Department of Physics, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon</wicri:regionArea><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author><author><name sortKey="Chang, L L" uniqKey="Chang L">L. L. Chang</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Hong Kong</country><wicri:regionArea>Department of Physics, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon</wicri:regionArea><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author><author><name sortKey="Wang, P D" uniqKey="Wang P">P. D. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ</wicri:regionArea><wicri:noRegion>Glasgow G12 8QQ</wicri:noRegion></affiliation></author><author><name sortKey="Sotomayor Torres, C M" uniqKey="Sotomayor Torres C">C. M. Sotomayor Torres</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ</wicri:regionArea><wicri:noRegion>Glasgow G12 8QQ</wicri:noRegion></affiliation></author><author><name sortKey="Ledentsov, N N" uniqKey="Ledentsov N">N. N. Ledentsov</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 198904, Russia</s1><sZ>12 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 198904</wicri:regionArea><wicri:noRegion>St. Petersburg 198904</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0117732</idno><date when="1996-12-15">1996-12-15</date><idno type="stanalyst">PASCAL 97-0117732 AIP</idno><idno type="RBID">Pascal:97-0117732</idno><idno type="wicri:Area/Main/Corpus">018848</idno><idno type="wicri:Area/Main/Repository">019653</idno><idno type="wicri:Area/Chine/Extraction">002540</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title><title level="j" type="main">Physical review. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7855C</term><term>7847</term><term>Etude expérimentale</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to study optical emissions of ultrathin InAs layers with average layer thickness ranging from 1/12 to 1 ML grown on GaAs substrates. We have found that the inhomogeneous broadening of the PL from InAs layers can be well described by the quantum-well model with InAs islands coupling to each other and being regarded as a quasiwell. From the temperature dependence of the exciton linewidth, the exciton-LO-phonon scattering coefficient was found to be comparable to that in conventional two-dimensional quantum wells. In the TRPL measurements, the PL decay time increases linearly with temperature, which is a typical characteristic of free excitons in quantum wells. All these results indicate that the excitons localized in InAs exhibit two-dimensional properties of quantum wells, despite the topographical islandlike structure. © 1996 The American Physical Society.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0></fA03><fA05><s2>54</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Two-dimensional excitonic emission in InAs submonolayers</s1></fA08><fA11 i1="01" i2="1"><s1>YUAN (Z. L.)</s1></fA11><fA11 i1="02" i2="1"><s1>XU (Z. Y.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZHENG (B. Z.)</s1></fA11><fA11 i1="04" i2="1"><s1>XU (J. Z.)</s1></fA11><fA11 i1="05" i2="1"><s1>LI (S. S.)</s1></fA11><fA11 i1="06" i2="1"><s1>GE (W.)</s1></fA11><fA11 i1="07" i2="1"><s1>WANG (Y.)</s1></fA11><fA11 i1="08" i2="1"><s1>WANG (J.)</s1></fA11><fA11 i1="09" i2="1"><s1>CHANG (L. L.)</s1></fA11><fA11 i1="10" i2="1"><s1>WANG (P. D.)</s1></fA11><fA11 i1="11" i2="1"><s1>SOTOMAYOR TORRES (C. M.)</s1></fA11><fA11 i1="12" i2="1"><s1>LEDENTSOV (N. N.)</s1></fA11><fA14 i1="01"><s1>National Laboratory for Superlattices & Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. 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